고체전자구조계산연구실에서 미국 Rutgers대학의 김흥식 박사님을 초청하여 아래와 같이 세미나를 개최합니다.

학과 구성원 여러분의 많은 참석을 부탁 드립니다.

○ Date/time: 2019. 1. 16(Wed.) 16:00

○ Place: Science Building 1  #31214

○ Speaker: 김  흥  식 박사님 (미국 Rutgers 대학)

○ Title: Band Representation Analysis of Intersecting Nodal Rings in Semiconducting Layers

○ Abstract:  The unique properties of topological semimetals have strongly driven efforts to seek for new topological phases and related materials. Here, we identify a critical condition for the existence of intersecting nodal rings (INRs) in symmorphic crystals, and further classify all possible kinds of INRs which can be obtained in the layered semiconductors with Amm2 and Cmmm space group symmetries. Several honeycomb structures are suggested to be topological INR semimetals, including layered and “hidden” layered structures. Transitions between the three types of INRs, named as α, β, and γ type, can be driven by external strains in these structures. The resulting surface states and Landau-level structures, more complicated than those resulting from a simple nodal loop, are also discussed.