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물리학과 저차원 스핀계 연구팀에서는 초청세미나를 아래와 같이 개최합니다. 관심있는 분들의 많은 참여 바랍니다. ○ 일시 : 2006년 10월 13일(금) 15:00- ○ 장소 : 자연과학관 A동 31214 첨단강의실 ○ 연사 : 서 순 애 박사(삼성종합기술원) ○ 주제 : The Resistance switching mechanism of polycrystalline NiO thin film. ○ 초록 : Bi-stable conductive memory switching devices based on transition metal oxides (TMO) are now emerging as a candidate for next generation non-volatile memories due to their superior scalability, process compatibility and low voltage operation. Despite of remarkable development of the memory devices of TMO, microscopic origin is still veiled. Bistable memory switching mechanism in NiO thin films is investigated through several different experimental approach. Local filament formation and rupture are strongly correlated with distribution of repetitive switching cycle. Our results validate the feasibility of high density integration by controlling the complete confinement and number density of filaments.
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