korean english


Home > 게시판 > 세미나

아래와 같이 세미나를 개최하오니 많이 참석해 주시기 바랍니다. 아 래 제목: Resistance Switching Behavior of Epitaxially Grown NiO Thin Films 연사: 이승란 박사(서울대학교 재료공학부) 일시: 2009년 9월 15일(화) 15:00-17:00 장소: 기초과학연구소 세미나실(31317호) 초록: Resistance switching phenomenon in metal-oxide-metal (MOM) structures has attracted great attention due to its potential applications in nonvolatile resistance random access memory (ReRAM) devices. In addition to many efforts to improve device performance, extensive studies have been devoted to explain the switching mechanism. Among various oxide materials, polycrystalline NiO (poly-NiO) films have been intensively studied owing to the better retention and endurance properties of NiO than other oxide systems. In order to understand resistance switching mechanism of NiO, we have deposited epitaxial NiO (epi-NiO) films on SrRuO3 (SRO) bottom electrodes as a model system. Interestingly, in contrast to the previous reports on unipolar switching behavior of poly-NiO, epi-NiO with Pt and CaRuO3 (CRO) as the TEs shows bipolar switching behavior. However, when reactive metals are employed as TEs such as Al and Ti, epi-NiO does not show successive resistance switching, indicating that the TE/epi-NiO interface plays a key role in bipolar resistance switching of epi-NiO. To understand the conduction properties of TE/epi-NiO, we studied the temperature dependence of the I-V characteristics for various TEs and resistance states. The temperature dependence of the pristine TE/epi-NiO suggests that oxygen ions in an epi-NiO surface migrates and oxidizes the TEs except CRO, resulting in an interfacial oxide layer between the TEs and epi-NiO. Furthermore, after the electroforming process, the temperature dependence of the ON and OFF states exhibits metallic and non-insulating behavior, respectively. From our experimental results, we suggest the interfacial oxide is responsible for the insulating behavior of the pristine state and the role of the electroforming process is to make conducting path in the interfacial oxide to epi-NiO. The details of the switching mechanism of epi-NiO will be discussed further. 22906087062290608706
번호 제목 날짜 조회 수
공지 2021학년도 1학기 콜로퀴움 일정 2021.01.13 27886
공지 <12/8(Thu.) 11:00am>노벨상 소개 강연 - 2016년 노벨 물리학상: 위상 응집 물리의 탄생 2016.11.28 635456
640 2019학년도 2학기 콜로퀴움 일정 2019.07.17 390496
639 2020학년도 1학기 콜로퀴움 일정 2020.01.31 225682
638 2017학년도 1학기 콜로퀴움 일정 2017.01.05 129921
637 <5/16(토)> 세미나 개최 안내 2015.05.18 123087
636 2016학년도 1학기 콜로퀴움 일정 2016.02.03 116792
635 2019학년도 1학기 콜로퀴움 일정 2019.01.08 104479
634 2018학년도 2학기 콜로퀴움 일정 2018.07.03 100019
633 2018학년도 1학기 콜로퀴움 일정 2018.01.03 93050
632 <4/2> Radio Detection of Ultra High Energy Cosmic Rays and Neutrinos in Antarctica 2014.03.26 92698
631 2017학년도 2학기 콜로퀴움 일정 2017.07.04 88981
630 2014학년도 2학기 콜로퀴움 일정 2014.09.11 88078
629 <5/1>In vivo optical imaging of hemodynamic changes 2009.05.06 81156
628 <6/2> The black hole search at the LHC: critical comment 2011.06.01 81115
627 2020학년도 2학기 콜로퀴움 일정 2020.07.16 79848
626 <10/28>Grazing Incidence X-ray Diffraction and Surface X-ray Scattering Study of Hematite (α-Fe2O3) Nano-cube 2011.10.26 78929
625 <9/1> 원자핵 자기공명(Nuclear Magnetic Resonance) 해설 - 원자선에서 영상까지 2010.08.30 78895
624 BK 석학초청 특별세미나 - Frustration and dimensional reduction in multi-orbital systems 2011.10.28 78127
» <9/15> Resistance Switching Behavior of Epitaxially Grown NiO Thin Films 2009.09.07 77979
622 2016학년도 2학기 콜로퀴움 일정 2016.08.02 77837