logo

korean english

게시판

Home > 게시판 > 세미나

아래와 같이 세미나를 개최하오니 많이 참석해 주시기 바랍니다. 아 래 제목: Resistance Switching Behavior of Epitaxially Grown NiO Thin Films 연사: 이승란 박사(서울대학교 재료공학부) 일시: 2009년 9월 15일(화) 15:00-17:00 장소: 기초과학연구소 세미나실(31317호) 초록: Resistance switching phenomenon in metal-oxide-metal (MOM) structures has attracted great attention due to its potential applications in nonvolatile resistance random access memory (ReRAM) devices. In addition to many efforts to improve device performance, extensive studies have been devoted to explain the switching mechanism. Among various oxide materials, polycrystalline NiO (poly-NiO) films have been intensively studied owing to the better retention and endurance properties of NiO than other oxide systems. In order to understand resistance switching mechanism of NiO, we have deposited epitaxial NiO (epi-NiO) films on SrRuO3 (SRO) bottom electrodes as a model system. Interestingly, in contrast to the previous reports on unipolar switching behavior of poly-NiO, epi-NiO with Pt and CaRuO3 (CRO) as the TEs shows bipolar switching behavior. However, when reactive metals are employed as TEs such as Al and Ti, epi-NiO does not show successive resistance switching, indicating that the TE/epi-NiO interface plays a key role in bipolar resistance switching of epi-NiO. To understand the conduction properties of TE/epi-NiO, we studied the temperature dependence of the I-V characteristics for various TEs and resistance states. The temperature dependence of the pristine TE/epi-NiO suggests that oxygen ions in an epi-NiO surface migrates and oxidizes the TEs except CRO, resulting in an interfacial oxide layer between the TEs and epi-NiO. Furthermore, after the electroforming process, the temperature dependence of the ON and OFF states exhibits metallic and non-insulating behavior, respectively. From our experimental results, we suggest the interfacial oxide is responsible for the insulating behavior of the pristine state and the role of the electroforming process is to make conducting path in the interfacial oxide to epi-NiO. The details of the switching mechanism of epi-NiO will be discussed further. 22906087062290608706
번호 제목 날짜 조회 수
공지 <12/8(Thu.) 11:00am>노벨상 소개 강연 - 2016년 노벨 물리학상: 위상 응집 물리의 탄생 2016.11.28 1016528
102 <8/5(Fri.) 10:30> Phase Slips in Superfluid Spin Transport in Magnetic Wires 2016.08.02 53479
101 <Nov. 2(Wed.) 4:30 PM> 현대 우주론 이론과 관찰 (Theories and observations of modern cosmology) 2016.10.19 53395
100 <June 8(Wed.) 4:30 PM> 세계와 우리나라 우주개발 도전 2016.06.01 53343
99 <May. 4(Wed.) 4:30 PM> 플라즈마를 이용한 표면처리 기술 2016.04.27 53119
98 <April. 27(Wed.) 4:30 PM> 로봇과 함께 살아갈 미래 2016.04.22 53112
97 <Nov.4(Wed.)>Progresses in Elucidating the Optoelectronic Properties of Perovskite Semiconductor 2020.10.28 52906
96 <12/2(Fri.) 14:00>Overview of HIMAC facility 2016.12.01 52903
95 <Mar. 15(Wed.) 4:30 PM>반도체 Fab Process와 물리학 전공자 2017.03.14 52789
94 <May. 18(Wed.) 4:30 PM> Search for Hidden Neutrinos at the High Energy Frontier 2016.05.23 52761
93 <Dec. 14(Wed.) 4:30 PM>중력과 양자 얽힘 (tentative) 2016.12.07 52726
92 <Dec.13(Wed.) 4:30 PM>기본에 충실하고 새로움에 도전한다 - 자율주행자동차의 핵심 기술들 – 2017.12.07 52693
91 <Nov. 9(Wed.) 4:30 PM> 20-nm resolution imaging of brain circuitry by next-generation expansion microscopy 2016.11.02 52587
90 <June 1(Wed.) 4:30 PM> 중력으로 강한 핵력 이해하기 2016.05.26 52553
89 <April 25(Mon) 16:30> Neutron Recoil Polarization in Low‐energy Photodisintegration of the Deuteron 2016.04.25 52267
88 <8/24(Fri.) 3:30pm>Secret interactions of light sterile neutrinos with the DSNB 2018.08.21 52014
87 <8/26(Mon) 14:00 ~ >Constructing viable models of bouncing scenarios 2019.08.20 51827
86 <Mar.20(Wed.)> Connecting Thermoelectricity and Superconductivity by Pressure Bridge 2019.03.13 51709
85 <May 24(Wed.) 4:30 PM>누구나 과학을 통찰하는 법 2017.05.17 50826
84 <8/23(Thu.) 2:00pm>What will we do with near-term quantum computers? 2018.08.17 50202
83 <May 31(Wed.) 4:30 PM>중력파, 새로운 천문학과 물리학의 시작 2017.05.24 50027