logo

korean english

게시판

Home > 게시판 > 세미나

아래와 같이 세미나를 개최하오니 많이 참석해 주시기 바랍니다. 아 래 제목: Resistance Switching Behavior of Epitaxially Grown NiO Thin Films 연사: 이승란 박사(서울대학교 재료공학부) 일시: 2009년 9월 15일(화) 15:00-17:00 장소: 기초과학연구소 세미나실(31317호) 초록: Resistance switching phenomenon in metal-oxide-metal (MOM) structures has attracted great attention due to its potential applications in nonvolatile resistance random access memory (ReRAM) devices. In addition to many efforts to improve device performance, extensive studies have been devoted to explain the switching mechanism. Among various oxide materials, polycrystalline NiO (poly-NiO) films have been intensively studied owing to the better retention and endurance properties of NiO than other oxide systems. In order to understand resistance switching mechanism of NiO, we have deposited epitaxial NiO (epi-NiO) films on SrRuO3 (SRO) bottom electrodes as a model system. Interestingly, in contrast to the previous reports on unipolar switching behavior of poly-NiO, epi-NiO with Pt and CaRuO3 (CRO) as the TEs shows bipolar switching behavior. However, when reactive metals are employed as TEs such as Al and Ti, epi-NiO does not show successive resistance switching, indicating that the TE/epi-NiO interface plays a key role in bipolar resistance switching of epi-NiO. To understand the conduction properties of TE/epi-NiO, we studied the temperature dependence of the I-V characteristics for various TEs and resistance states. The temperature dependence of the pristine TE/epi-NiO suggests that oxygen ions in an epi-NiO surface migrates and oxidizes the TEs except CRO, resulting in an interfacial oxide layer between the TEs and epi-NiO. Furthermore, after the electroforming process, the temperature dependence of the ON and OFF states exhibits metallic and non-insulating behavior, respectively. From our experimental results, we suggest the interfacial oxide is responsible for the insulating behavior of the pristine state and the role of the electroforming process is to make conducting path in the interfacial oxide to epi-NiO. The details of the switching mechanism of epi-NiO will be discussed further. 22906087062290608706
번호 제목 날짜 조회 수
공지 <12/8(Thu.) 11:00am>노벨상 소개 강연 - 2016년 노벨 물리학상: 위상 응집 물리의 탄생 2016.11.28 1090446
698 <Dec. 9(Fri.)>Confirming Topological Materials by ARPES 2022.12.02 1
697 <Dec. 20(Tue.)>Studying TeV Gamma-Ray Microquasars with the HAWC Observatory 2022.12.01 13
696 <Nov. 21(Mon.)> Strong magneto-elastic coupling observed in ultrafast lattice dynamics of SrRuO3 based superlattices 2022.11.15 36
695 <Nov. 23(Wed.)> 단백질 구조예측과 알파폴드의 물리학 2022.11.17 46
694 <Nov. 16(Wed.)> 원자핵의 존재 한계를 찾아서 2022.11.11 47
693 <Nov. 11(Fri.)> On the origin of CDW in two-dimensional materials 2022.11.04 88
692 <Nov. 11(Fri.)> Nonvanishing anomalous Hall effect in Mn3Al- compensated ferrimagnetic Heusler compound 2022.11.08 92
691 <Nov. 2(Wed.)> The latest from quantum Hall effect in graphene family 2022.10.27 139
690 <Oct. 26(Wed.)>Atomic-scale observation of structural phase transition of strontium ferrite 2022.10.22 158
689 <Oct. 5(Wed.)>“사라진 중성미자를 찾아서” 2022.09.29 223
688 <Sep. 21(Wed.)>Dynamics and thermodynamics of bimolecular reactions at aqueous-nonaqueous interfaces 2022.09.15 303
687 <Nov. 9(Wed.)> 천체와 우주의 진화에서 보는 원소의 기원 2022.11.02 387
686 <Sep. 14(Wed.)>The Next Generation of Photonic Sources – Light-Emitting Devices 2022.09.08 530
685 <Sep. 7(Wed.)>Flavor of particles, as a key for New physics 2022.09.01 551
684 <Oct. 12(Wed.)>Neurodegenerative Diseases from the Chemical Force Point of View 2022.10.05 997
683 2022학년도 2학기 콜로퀴움 일정 2022.06.22 1681
682 <May 4(Wed.)>Recent progress in the study of topological phases of matter 2022.04.27 1768
681 <May 18(Wed.)>Magnetoresistance and Hall effects of Fe5Sn3 single crystals 2022.05.12 1774
680 <Apr. 20(Wed.)> 반도체 공정용 플라즈마 물리 2022.04.14 1800
679 <Apr. 27(Wed.)> I) A few first questions by me. II) ‘Topotactic resistance switching RAM’의 최초 발견 2022.04.20 1803