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아래와 같이 콜로퀴움을 개최하오니 많이 참석해 주시기 바랍니다.

4시 20분부터 제1과학관 31214 e+강의실에서 다과를 준비하오니 많은 참석 부탁드립니다

 

아 래

 

제목: SPM Study of CVD Graphene on h-BN Film

연사: 송  영  재  교수님 (성균관대학교 SAINT, 물리학과)

  

일시: 2013년 10월 16일(수) 오후4:30

 

장소: 제1과학관 31214  e+첨단강의실 

 

초록: As an ideal substrate for graphene, hexagonal boron nitride (h-BN) has been utilized and studied extensively by transfer technique, which still has a high chance to have impurities at the graphene/h-BN interface. Here we present our Scanning Tunneling Microscopy (STM) and Spectroscopy (STS) study for atomic and electronic structure of CVD-grown graphene on h-BN film. High resolution STM image shows perfect honeycomb lattice structure of graphene on top surface and Moiré pattern indicating the structural interference patter with the underlying h-BN crystal. Non-disturbed electronic structure of graphene on h-BN film is also confirmed by spatially-resolved STS measurements, which show very sharp and symmetric V shape with a Dirac point at Fermi level. To confirm the graphene growth mechanism on h-BN film/Cu foil, careful Atomic Force Microscopy (AFM) and Kelvin Probe Force Microscopy (KPFM) measurements were performed on different thickness of h-BN film on a SiO2 substrate to unveil the catalytic origin of graphene growth on h-BN/Cu. These experimental results can explain the thickness dependence on the quality and coverage of graphene CVD-grown on h-BN/Cu.
 

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