아래와 같이 콜로퀴움을 개최하오니 많이 참석해 주시기 바랍니다.
4시 20분부터 제1과학관 31214 e+강의실에서 다과를 준비하오니 많은 참석 부탁드립니다
아 래
제목: Electrical Instability in Nanoscale Channel Devices: Top-down & Bottom-up Approaches
연사: 김 규 태 교수님 (고려대학교)
일시: 2012년 5월 2(수) 오후4:30
장소: 31214 e+첨단강의실
초록: Large surface-to-volume ratio of the nanoscale electronic devices cause the sensitive
response of the electrical signal in view of the hysteresis, noise or the influence of the
surrounding charges such as ions. Because the imperfection of the interfaces cannot
be avoided completely, the instability or the fluctuation can give good hints on the detailed
states of the defects. In this talk, the electrical responses for qualifying the nanoscale
channel devices will be discussed for the cases of nanotube, nanowire and the FinFET
devices.