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에피 산화물 연구실에서 Osaka University의 Jobu Matsuno 교수님을 초청하여 아래와 같이 세미나를 개최합니다.

학과 구성원 여러분의 많은 참석을 부탁 드립니다.

온라인으로 진행되는 세미나입니다.

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Title: Oxide electronics utilizing spin-orbit coupling


Speaker: Prof. Jobu Matsuno  (Osaka University)


Date/time: 2021. 6. 10 (Thu.) 10:00 - 11:30 AM


○ 온라인 참여방법: https://pusan.zoom.us/j/84514331691?pwd=MW9xaGpoUHNHS0o2VEYzZ1Z4QTlpdz09
   

Abstract: A strong spin-orbit coupling (SOC) inherent to 5d electron systems recently
emerged as a new paradigm for oxide electronics. For example, we investigated novel
physics of spin-orbital Mott insulators [1] and possible topological insulators [2] by tuning
the electronic phases through superlattice technique. In this talk, we suggest that 5d Ir
oxides are promising class of spintronic materials by focusing on two topics: magnetic
skyrmion and spin current.


Magnetic skyrmion is a topological spin texture, which is promising for low-power
electronics since it can be driven by tiny current. We have studied transport properties of
SrRuO3-SrIrO3 bilayers to observe an anomaly in the Hall resistivity in addition to
anomalous Hall effect (AHE); this is attributed to topological Hall effect (THE) [3]. The
results suggest that magnetic skyrmions of 10–20 nm are generated by the combination
of broken inversion symmetry at the interface and strong SOC of SrIrO3. Even more
surprising is that we can control both AHE and THE by electric field in the SrRuO3-SrIrO3
bilayers [4]. The results established that strong SOC of nonmagnetic SrIrO3 is essential
in electrical tuning of these Hall effects.


Spin-current is a flow of spin angular momentum without any charge current; low-power
electronics is expected based on spin current. A charge current can be converted into a
spin current and vice versa, known as the spin Hall effect (SHE) and the inverse spin Hall
effect (ISHE). We demonstrated a large ISHE of IrO2, one of the simplest 5d oxides [5].
Very recently we also evidenced a large SHE of IrO2 through spin-orbit torque generation
[6]. The results indicate that Ir oxides are promising class of spintronic materials in terms
of spin current.


References:
[1] J. Matsuno et al., Phys. Rev. Lett. 114, 247209 (2015). [4] Y. Ohuchi et al., Nat. Commun. 9, 213 (2018).
[2] D. Hirai et al., APL Mater. 3, 041508 (2015). [5] K. Fujiwara et al., Nat. Commun. 4, 2893 (2013).
[3] J. Matsuno et al., Sci. Adv. 2, e1600304 (2016). [6] K. Ueda et al., Phys. Rev. B 102, 134432 (2020).

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