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4시 20분부터 제1과학관 31214 e+강의실에서 다과를 준비하오니 많은 참석 부탁드립니다


아 래


제목: Study of carrier transport and charging effects in organic devices


연사: 임   은   주 교수님 (단국대학교 응용물리학과)


일시: 2011년 11월 16일(수) 오후 4:30


장소: e+첨단강의실 (31214호실)


초록: There are many reports on thin film transistors using organic and polymeric semiconductors because of their potential applications such as low-cost memory cards, smart price tags and labels [1]. However, understanding of the driving mechanism, especially degradation characteristics and carrier motion are still not sufficient [2]. For practical applications of organic field effect transistors (OFETs), the presence of defects in the active layer is a serious problem. In this study, we investigated the carrier transport in OFETs, and discussed the charging effects that result in degradation by prolonged electrical stress. The stability of OFET depends critically on defects [3,4]. To clarify the carrier behavior in the OFET channel, we investigated the carrier transport and charging effects in the OFETs by using electric field induced optical second harmonic generation (SHG), Raman and so forth. The EFISHG probes the space charge field distribution in the pentacene FET channel, and visualize carrier motions therein [5,6]. To understand the effect of defects on the carrier transport, Raman spectroscopy and electrical capacitance-voltage measurements were employed. Raman measurement evidently shows structural deformations as well as chemical changes in molecular level [7,8]. With taking into account these, carrier injection process followed by carrier accumulation at the Polyimide/TIPS-pentacene interface has also been investigated by using time-resolved SHG (TR-SHG) measurements. Fresh samples of double layer ITO/Polyimide/TIPS-pentacene/Au devices showed the rapidly increase of the EFISHG by charging onto Au electrode, followed by the decay due to the succeeding hole injection to the TIPS-pentacene. On the other hand, aged samples only showed the increase of SHG signal by electrode charging. These results suggested holes were prohibited from injection after aging [9]. As mentioned above, to study charging effects by using TR-SHG, Raman etc., are very helpful in terms of device operation and degradation.


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